inchange semiconductor isc product specification isc website www.iscsemi.com isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 1N65 features drain current i d = 1.2a@ t c =25 drain source voltage : v dss = 650v(min) static drainsource onresistance : r ds(on) = 12.5 (max) fast switching applications switching power supplies,converters,ac and dc motor controls absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drainsource voltage 650 v v gs gatesource voltagecontinuous 30 v i d drain currentcontinuous 1.2 a i dm drain currentsingle plused 4.8 a p d total dissipation @t c =25 40 w t j max. operating junction temperature 150 t stg storage temperature 55~150 thermal characteristics symbol parameter max unit r th jc thermal resistance, junction to case 3.13 /w r th ja thermal resistance, junction to ambient 62.5 /w
inchange semiconductor isc product specification isc website www.iscsemi.com isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 1N65 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min type max unit v (br)dss drainsource breakdown voltage v gs = 0; i d =250a 650 v v gs (th ) gate threshold voltage v ds = v gs ; i d =250a 2.0 4.0 v v sd diode forward onvoltage i s = 1.2a ;v gs = 0 1.4 v r ds( on ) drainsource onresistance v gs = 10v; i d = 0.6a 12.5 i gss gatebody leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds =650v; v gs = 0 10 a
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